| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film forming device for manufacturing a photoelectric conversion element with improved short-circuit current sensitivity. <P>SOLUTION: The thin-film forming device includes: a reaction container 11 whose inside can be sealed in a vacuum state; a holding portion 12 for holding an object to be treated 1 in the reaction container 11; a material gas supply portion 18 for supplying, into the reaction container 11, a material gas for forming an intrinsic semiconductor layer at least substantially of microcrystal silicon germanium on the object to be treated 1; and a chemical reaction-accelerating means for accelerating chemical reaction of the material gas to form the intrinsic semiconductor layer on the object to be treated 1 by a chemical vapor growth method. The material gas supply portion 18 is provided with an oxygen reducing means for reducing oxygen concentration in the intrinsic semiconductor layer to less than 10<SP>20</SP>pieces/cm<SP>3</SP>, the oxygen reducing means being a purifier 21 provided between the material gas supply portion 18 and reaction container 11 to remove at least one of an oxygen gas in the material gas and a gas capable of producing oxygen. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
