SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To decrease a heat damage caused by annealing when the annealing is performed to a back electrode. SOLUTION: A semiconductor device includes: a silicon carbide substrate 10 where a vertical short key diode is formed; an anode electrode 20 that is provided on a front surface of the silicon carbide substrate 10; a cathode electrode 50 that is provided on a back surface of the silicon carbide substrate 10; and a conductive adiabatic region 40 that is provided between the silicon carbide substrate 10 and the cathode electrode 50. The adiabatic region 40 has heat conductivity smaller than that of a semiconductor material of the silicon carbide substrate 10. COPYRIGHT: (C)2011,JPO&INPIT