| 摘要 |
Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system for sequential deposition or atomic layer deposition (ALD) is provided and includes a lid assembly coupled with a chamber housing, wherein the lid assembly contains a lid having a plurality of controllable flow channels extending from an upper lid surface, through the lid, and to a lower lid surface, a gas manifold disposed on the lid, and at least one valve coupled with the gas manifold and adapted to control a gas flow through one of the controllable flow channels. The substrate processing system further contains a gas reservoir disposed between a first gas line and a second gas line, and the gas reservoir is fluidly connected to the gas manifold by the second gas line.
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