METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE

摘要

In the provided method for manufacturing a semiconductor substrate, a composite substrate (80P) that has a support section (30) and first and second silicon carbide substrates (11, 12) is prepared. There is a gap (GP) with an opening (CR) between the first and second silicon carbide substrates (11, 12). A plug layer for the gap (GP) is formed above the opening (CR). The plug layer includes at a silicon layer, at least. The silicon layer is carbonized to form a lid (70) comprising silicon carbide that plugs the gap (GP) above the opening (CR). Depositing a sublimate from respective first and second lateral surfaces (S1, S2) of the first and second silicon carbide substrates (11, 12) onto the lid (70) forms a joining part that plugs up the opening (CR). The lid (70) is then removed.