| 摘要 |
<p>Disclosed is a thin film transistor substrate which is provided with: a plurality of source lines (11a) provided to extend parallel to a substrate (10); a plurality of gate lines (13a) provided to extend parallel to each other in the direction that intersects the source lines (11a); and a plurality of pixel electrodes (17a), which are arranged in matrix along the direction wherein the source lines (11a) extend and in the direction wherein the gate lines (13a) extend. On each gate line (13a), a through hole (Ha) is provided at a part where each gate line intersects each source line (11a), and inside of the through hole (Ha), a semiconductor layer (15a) is provided with a gate insulating film (14a) therebetween. Each semiconductor layer (15a) exposed from each gate line (13a) has one end thereof overlapping each source line (11a) and connected to each source line (11a), and the other end thereof overlapping each of the drain electrodes (16a) and connected to each of the drain electrodes (16a), said drain electrodes being electrically connected to the pixel electrodes (17a), respectively.</p> |
