发明名称 METHOD AND SYSTEM FOR WAFER INSPECTION
摘要 <P>PROBLEM TO BE SOLVED: To qualitatively and/or quantitatively evaluate multiple patterning lithographic processing. <P>SOLUTION: A method for evaluating a lithographic pattern that is obtained using multiple patterning lithographic processing according to a target design composed of a first design and at least a second design includes aligning the target design with the lithographic pattern. The method further includes identifying a stitching region in the lithographic pattern based on a region of overlap of the first design and the second design in the target design aligned with the lithographic pattern and determining for the identified stitching region in the lithographic pattern whether a predetermined criterion is fulfilled. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011101004(A) 申请公布日期 2011.05.19
申请号 JP20100242065 申请日期 2010.10.28
申请人 IMEC;HITACHI HIGH-TECHNOLOGIES CORP 发明人 WIAUX VINCENT JEAN-MARIE PIERRE PAUL;MATSUOKA RYOICHI;KOSHIHARA SHUNSUKE;SAKAI HIDEO
分类号 H01L21/027;G06T1/00 主分类号 H01L21/027
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