| 摘要 |
There is provided a cleaning method for a substrate processing apparatus capable of improving a removing rate of a deposit without increasing a self-bias voltage. The cleaning method includes supplying, to clean the inside of a processing chamber 102 under preset processing conditions, a processing gas including an O2 gas and an inert gas into the processing chamber at a preset flow rate ratio of the processing gas; and generating plasma of the processing gas by applying a high frequency power between a lower electrode 111 and a upper electrode 120. Here, the preset flow rate ratio of the processing gas is set depending on a self-bias voltage of the lower electrode 111 such that a flow rate ratio of the O2 gas is reduced while a flow rate ratio of the Ar gas is increased as an absolute value of the self-bias voltage decreases.
|
