发明名称 |
METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES AND DEVICES USING GLASS BONDING LAYERS, AND SEMICONDUCTOR STRUCTURES AND DEVICES FORMED BY SUCH METHODS |
摘要 |
Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to a substrate using a glass may be utilized to control the strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control the strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material.
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申请公布号 |
US2011114965(A1) |
申请公布日期 |
2011.05.19 |
申请号 |
US20100890220 |
申请日期 |
2010.09.24 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
LETERTRE FABRICE |
分类号 |
H01L29/20;C30B23/02;C30B25/02;C30B25/18;H01L21/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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