发明名称 POWER CONVERSION DEVICE
摘要 <p>Unlike diodes, MOS-FETs are characterized by sending current flowing bidirectionally, and thus, MOS-FETs must be controlled to switch on and off with respect to the direction of the supply of electricity. A control method that is applied when using MOS-FETs in rectifier circuits cannot be used, however, when applying MOS-FETs used in rectifier circuits to develop active converters. Another problem arises with the characteristics of circuit elements when the switching frequency is greater than one in a half-period of the power supply voltage of a booster chopper circuit. The purpose of the present invention is achieved by employing super junction structure N-channel MOS-FETs comprising low-on resistance characteristics in the switching elements thereof, wherein the control means controls so as to switch all MOS-FETs on when the AC power supply and the reactor short-circuit and to switch off the MOS-FETs that are connected on the positive terminal side of the AC power supply when short-circuiting the AC power supply and the reactor is not necessary.</p>
申请公布号 WO2011058665(A1) 申请公布日期 2011.05.19
申请号 WO2010JP01355 申请日期 2010.03.01
申请人 HITACHI APPLIANCES, INC.;FUNAYAMA, YUUJI;OKUYAMA, ATSUSHI;TAMURA, MASAHIRO;TAMURA, KENJI;NOTOHARA, YASUO 发明人 FUNAYAMA, YUUJI;OKUYAMA, ATSUSHI;TAMURA, MASAHIRO;TAMURA, KENJI;NOTOHARA, YASUO
分类号 H02M7/12 主分类号 H02M7/12
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