发明名称 |
TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE COMPRISING TRANSISTOR |
摘要 |
PURPOSE: A transistor, a manufacturing method thereof, and an electrode device including the same are provided to improve the reliability of a flat panel display device by including the transistor which suppresses the change of a property due to light. CONSTITUTION: A gate(G1) is formed on a substrate(SUB1). A gate insulation layer(Gl1) is formed on the substrate to cover the gate. A channel layer(C1) is formed on the gate insulation layer and is made of oxide with In and Zn and a first element. A source(S1) and a drain(D1) are connected to both sides of the channel layer. |
申请公布号 |
KR20110052939(A) |
申请公布日期 |
2011.05.19 |
申请号 |
KR20090109692 |
申请日期 |
2009.11.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SANG WOOK;KIM, CHANG JUNG;PARK, JAE CHUL;KIM, SUN IL |
分类号 |
H01L29/786;G02F1/1333 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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