发明名称 TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE COMPRISING TRANSISTOR
摘要 PURPOSE: A transistor, a manufacturing method thereof, and an electrode device including the same are provided to improve the reliability of a flat panel display device by including the transistor which suppresses the change of a property due to light. CONSTITUTION: A gate(G1) is formed on a substrate(SUB1). A gate insulation layer(Gl1) is formed on the substrate to cover the gate. A channel layer(C1) is formed on the gate insulation layer and is made of oxide with In and Zn and a first element. A source(S1) and a drain(D1) are connected to both sides of the channel layer.
申请公布号 KR20110052939(A) 申请公布日期 2011.05.19
申请号 KR20090109692 申请日期 2009.11.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SANG WOOK;KIM, CHANG JUNG;PARK, JAE CHUL;KIM, SUN IL
分类号 H01L29/786;G02F1/1333 主分类号 H01L29/786
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