| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein in particular, in a semiconductor device formed by using a thin-film transistor, even if a constant signal is input, dispersion is produced in the output potential, as well as, a current value flowing in the thin-film transistor, caused by variance or the like, of the threshold of the thin-film transistor. <P>SOLUTION: A gate and a drain are electrically connected, and the threshold of the transistor is obtained by using a transistor which operates in a manner of a diode. After an offset potential generated between the source and the drain of the transistor is obtained and held, a signal potential is input; and by having this superimposed on the held offset potential, a signal potential in which the threshold voltage which becomes the cause of dispersion in the threshold of the transistor is offset is obtained. <P>COPYRIGHT: (C)2011,JPO&INPIT |
