| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride laminated substrate that suppresses the occurrence of cracking and has improved crystallinity. <P>SOLUTION: The group III nitride laminated substrate includes a silicon substrate, a distorted superlattice laminate formed on the silicon substrate, and a group III nitride laminate grown on the distorted superlattice laminate. The distorted superlattice laminate is provided with at least a first superlattice laminate and a second superlattice laminate in order from the side of the silicon substrate, wherein the first superlattice laminate is formed by piling up an AlN layer and a GaN layer alternately, the second superlattice laminate is formed by piling up an AlN layer and an Al<SB>x</SB>Ga<SB>1-x</SB>N(0<x<1) alternately, and the total thickness of the first superlattice laminate exceeds 1 μm. <P>COPYRIGHT: (C)2011,JPO&INPIT |
