| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the semiconductor device by which a semiconductor layer of quantum dots can be formed inexpensively with high production efficiency and the semiconductor device having the semiconductor layer of the quantum dots can be mass-produced. <P>SOLUTION: Silicon particles 1 (nanoparticles) each having a silicon nitride film 2 formed on a surface are present at lattice points of a face-centered cubic lattice, and four silicon particles 1, which are at positions where three axes cross one another, among respective silicon particles 1 present on one surface of the face-centered cubic lattice are in contact with silicon particles 1 at face-centered positions. Consequently, respective conductor particles such as the silicon particles 1 are insulated and isolated by an insulating film such as the silicon nitride film 2 to form quantum dots which are arranged at substantially equal intervals, and a layer thereof has properties of a semiconductor. The silicon particles 1 are not limited to the positions of the face-centered cubic lattice, but may be arranged at positions of closest filling of a body-centered cubic lattice etc. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
