发明名称 PATTERN FORMATION METHOD, PATTERN FORMATION SYSTEM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a pattern formation method for setting a pattern dimension and a pattern shape after processing to desired values, to provide a pattern formation system, and to provide a method for manufacturing a semiconductor device. SOLUTION: This pattern formation method includes: a processing object film formation process (S10) of forming a processing object film 28 on a substrate 20; a transfer process (S110) of bringing a template 10 into contact with an imprint material 30 applied onto the processing object film to transfer a form pattern 11 formed on the template to the imprint material 30; and a processing process (S130) of performing processing including etching of the processing object film using the imprint material with the form pattern transferred thereto as a mask. The transfer process is executed using a condition set based on data related to at least either of the dimension and the shape of the pattern of the processing object film after processing. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011100922(A) 申请公布日期 2011.05.19
申请号 JP20090256032 申请日期 2009.11.09
申请人 TOSHIBA CORP 发明人 SUGANO MASAHIRO
分类号 H01L21/027;B29C59/02;B81C99/00 主分类号 H01L21/027
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