发明名称 |
DEVICE INCLUDING NONVOLATILE MEMORY ELEMENT |
摘要 |
A device including a novel nonvolatile memory element is provided. A device including a nonvolatile memory element in which an oxide semiconductor is used as a semiconductor material for a channel formation region. The nonvolatile memory element includes a control gate, a charge accumulation layer which overlaps with the control gate with a first insulating film provided therebetween, and an oxide semiconductor layer formed using an oxide semiconductor material, which overlaps with the charge accumulation layer with a second insulating film provided therebetween.
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申请公布号 |
US2011114941(A1) |
申请公布日期 |
2011.05.19 |
申请号 |
US20100943532 |
申请日期 |
2010.11.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO KIYOSHI;IEDA YOSHINORI;KOYAMA JUN |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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