<p>A method of forming a field effect transistor (FET) capacitor includes forming a channel region; forming a gate stack over the channel region; forming a first extension region on a first side of the gate stack, the first extension region being formed by implanting a first doping material at a first angle such that a shadow region exists on a second side of the gate stack; and forming a second extension region on the second side of the gate stack, the second extension region being formed by implanting a second doping material at a second angle such that a shadow region exists on the first side of the gate stack.</p>
申请公布号
WO2011057860(A1)
申请公布日期
2011.05.19
申请号
WO2010EP64591
申请日期
2010.09.30
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;SLEIGHT, JEFFREY;JI, BRIAN;CHANG, LELAND;LIN, CHUNG-HSUN