PROCESSING METHOD FOR SOI SUBSTRATE

摘要

PURPOSE: A SOI substrate processing method is provided to secure a stable profile although large groove is formed on a SOI substrate. CONSTITUTION: A SOI substrate processing method comprises the follows. A groove processing target area of silicone layers is partitioned into multiple unit areas(S110). A dry etching process is performed in order to expose an oxidized layer to outside(S120). The oxide layer is eliminated in order to remove the remainder area from the partitioned unit area(S130).