| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to increase the alignment degree of exposed masks used in a photolithography process, thereby obtaining reliability for the photolithography process. CONSTITUTION: A semiconductor substrate(101) defines first to third areas. A gate insulating film is formed on the second area and an insulating film for an alignment key is formed on the third area. Memory cells are formed on the first area. An insulating film(111) and a conducive film(113) are stacked on the semiconductor substrate including the gate insulating film and the insulating film for an alignment key. The conductive film, the insulating film, and the semiconductor substrate are etched so device separation trenches are formed on the first and second areas.</p> |
