Process for producing III-N substrates and free-standing III-N layers

摘要

An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a substrate. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process.