| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to effectively prevent a void by forming a gate to fill a second trench after the second trench with a slope is formed. CONSTITUTION: An oxide layer(102) is formed on a semiconductor substrate(100). A nitride layer(104) is formed on an oxide layer. A first insulation layer with a first trench is formed by etching the nitride layer. A second trench(108) is formed by etching the semiconductor substrate using the first insulation layer as an etching mask. A buried gate(110) is formed to fill the second trench.
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