| 摘要 |
1,045,429. Transistors. STANDARD TELEPHONES & CABLES Ltd. March 31, 1965, No. 13629/65. Heading H1K. An insulated gate field effect transistor has source and drain regions of one conductivity type separated by a channel region consisting of the thickness of an epitaxially deposited layer of opposite conductivity type. In the embodiment a hole 14 (Fig. 2b, not shown) is etched using hydrogen chloride, through 0.001 ohm cm. N-type epitaxial layer 11 and part of substrate 10 of 1 ohm cm. P-type silicon. Epitaxial deposition of 5 ohm cm. P-type silicon results in layer 15, 5 Á thick, which lines the hole 14. The hole is then filled with 0.001 ohm cm. N-type material and the surface covered with silicon oxide. Metal connections 18, 20 and 19 provide contacts to source drain and gate regions respectively. Germanium may be used in place of silicon. |
