发明名称 CHEMICAL MECHANICAL POLISHING COMPOSITION AND METHODS RELATING THERETO
摘要 PURPOSE: A chemical mechanical polishing composition is provided to enable use for the polishing of a substrate including silicon oxide materials and silicon nitride materials. CONSTITUTION: A chemical mechanical polishing composition comprises a first material of chemical formula 1 as a initial ingredient, a second material of chemical formula 2, abrasive and water. In chemical formulas, R^1, R^2, R^3, R^4, R^5, R^6 and R^7 are respectively a -(CH2)n- bridging group, wherein n is an integer of 1-10; R^8, R^9, R^10, R^11 and R^12 are respectively selected from hydrogen and C1-6 alkyl groups, and two or more of R^8, R^9, R^10, R^11 and R^12 are bonded to form a ring structure.
申请公布号 KR20110052519(A) 申请公布日期 2011.05.18
申请号 KR20100112111 申请日期 2010.11.11
申请人 ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. 发明人 LIU ZHENDONG;GUO YI;KANCHARLA ARUN KUMAR REDDY;ZHANG GUANGYUN
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
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