Composition and method for photoresist removal

摘要

A composition, for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprises; (i) at least one non-polymeric glycol ether solvent; (ii) at least one non-aromatic alcohol solvent; (iii) at least one solvent selected from an aromatic alcohol and a glycol; (iv) at least one organic sulfonic acid; and (v) at least one corrosion inhibitor. The composition can be used to remove multi-layer photoresist at temperatures less than 65°C and in contact times under three minutes, allowing high throughput on single wafer tools.