METHOD OF FORMING HARDMASK PATTERNS

摘要

PURPOSE: A method for forming a hard mask pattern is provided to perform an etching process to form a hard mask pattern after forming a compensating film on the damaged part of a hard mask film, thereby preventing the hard mask film from being asymmetrically etched during an etching process. CONSTITUTION: A hard mask film(105) is formed on an underlying layer(101). A first sub film and a second sub film are stacked on the hard mask film. The second sub film is patterned. The first sub film is eliminated by the pattern second sub film as a mask to form a sub pattern on the hard mask film. The sub pattern and the hard mask film are cleaned.