发明名称 |
Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same |
摘要 |
A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer, |
申请公布号 |
EP2323159(A1) |
申请公布日期 |
2011.05.18 |
申请号 |
EP20100191250 |
申请日期 |
2010.11.15 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
LEE, DONG-HYUN;LEE, KI-YONG;SEO, JIN-WOOK;YANG, TAE-HOON;LISACHENKO, MAXIM;PARK, BYOUNG-KEON;LEE, KIL-WON;JUNG, JAE-WAN |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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