Group 4 metal precursors for metal-containing films

摘要

Group 4 metal containing films may be deposited using a new family of Group 4 metal precursors represented by the formula:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒM(OR 1 ) 2 (R 2 C(O)C(R 3 )C(O)OR 1 ) 2
wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R 1 is selected from the group consisting of linear or branched C 1-10 alkyls and C 6-12 aryls, and is preferably methyl, ethyl or n-propyl; R 2 is selected from the group consisting of branched C 3-10 alkyls and C 6-12 aryls, and is preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl; and R 3 is selected from the group consisting of hydrogen, C 1-10 alkyls, and C 6-12 aryls, and is preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60°C.