| 摘要 |
PURPOSE: A semiconductor device is provided to form a gate electrode and a bit line, thereby increasing cell efficiency by reducing a cell area. CONSTITUTION: An active area is formed on a semiconductor substrate(10) in a pillar shape. A first bit line(15a) is connected to the first surface of the active areas. A second bit line(15b) is expanded vertically to the first surface. A gate electrode is formed by connecting the second surface of the active area. A word line(20b) vertically crosses the second bit line.
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