发明名称 |
METHOD FOR FORMING A PATTERN STRUCTURE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PURPOSE: A method for forming a pattern structure and a method for manufacturing a semiconductor device are provided to suppress the composition change of a thin film after an etching process by uniformly etching elements included in the thin film. CONSTITUTION: A magnetic material layer including at least two element alloy materials and magnetic materials are formed on a substrate(10). The magnetic material layer includes a laminate structure for forming a magnetic tunnel junction structure. The magnetic material layer includes a lower magnetic film, a tunnel barrier film, and an upper magnetic film. The tunnel barrier film is made of metal oxide with an insulation property. A magnetic pattern(14) includes a lower magnetic film pattern(14a), a tunnel barrier film pattern(14b), and an upper magnetic film pattern(14c).
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申请公布号 |
KR20110052412(A) |
申请公布日期 |
2011.05.18 |
申请号 |
KR20100004570 |
申请日期 |
2010.01.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU, YONG HWAN;HWANG, JAE SEUNG;KWON, SUNG UN;EOM, KYOUNG HA |
分类号 |
H01L21/8247;H01L43/08 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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地址 |
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