| 摘要 |
A leakage current measurement circuit measuring a substrate leakage current and a gate leakage current in response to a variation in the size of an MOS transistor and a leakage current comparison circuit judging which one of the substrate leakage current and the gate leakage current is dominant. The leakage current measurement circuit includes a charge supply, a leakage current generator and a detection signal generator. The leakage current comparison circuit includes a charge supply, a leakage current comparator and a detection signal generator.
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