发明名称 |
Light-emitting device and manufacturing method thereof |
摘要 |
To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.
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申请公布号 |
US7943943(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20070818024 |
申请日期 |
2007.06.12 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;RIKEN |
发明人 |
HIRAYAMA HIDEKI;AKITA KATSUSHI;NAKAMURA TAKAO |
分类号 |
H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/36 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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