发明名称 TEST METHOD FOR MEMORY RELIABILITY STRESS
摘要 PURPOSE: A test method for a memory reliability stress is provided to generate similar data to real environment by using valuation data. CONSTITUTION: a test method for a memory reliability stress is comprised of steps: obtaining the address of a memory(S10); obtaining a rotate bit number from a rotate table(S20); rotating the memory address; generating valuation data(S30); reading/ writing valuation data from/in a memory address(S40); and increasing the memory address(S50).
申请公布号 KR20110050946(A) 申请公布日期 2011.05.17
申请号 KR20090107554 申请日期 2009.11.09
申请人 SEMI. LINE, INC. 发明人 MIN, BYUNG RONG;HA, MOON SU;RYU, SUNG YUN;KIM, DONG KWON;SHIN, SEUNG WOOK
分类号 G11C29/06 主分类号 G11C29/06
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