发明名称 Clock control circuit and a semiconductor memory apparatus having the same
摘要 A clock control circuit includes a clock delay device, an edge detection device, a phase determination device and a delay control device. The clock delay device generates a delayed rising clock and a delayed falling clock by delaying a rising clock and a falling clock, which are transferred from a clock generation circuit, in response to a control signal, and to transfer the delayed rising clock and the delayed falling clock to a data output buffer. The edge detection device detects a difference between an edge timing of the delayed rising clock and an edge timing of the delayed falling clock to generate edge detection signals. The phase determination device detects a duty ratio of each of the edge detection signals to generate phase determination signals. The delay control device generates the control signal in response to the phase determination signals.
申请公布号 US7944260(B2) 申请公布日期 2011.05.17
申请号 US20090407183 申请日期 2009.03.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM KWAN DONG
分类号 H03L7/06 主分类号 H03L7/06
代理机构 代理人
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