发明名称 High contrast lithographic masks
摘要 A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
申请公布号 US7944545(B2) 申请公布日期 2011.05.17
申请号 US20090463742 申请日期 2009.05.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BAGHERI SAEED;MELVILLE DAVID O. S.;ROSENBLUTH ALAN E.;TIAN KEHAN
分类号 G03B27/42;G03B27/52 主分类号 G03B27/42
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