发明名称 |
APPARATUS FOR ATOMIC LAYER DEPOSITION |
摘要 |
PURPOSE: An atomic layer depositing device is provided to improve the density and corrosion resistance of a thin film by supplying plasma in the same chamber. CONSTITUTION: A process chamber provides a space for a deposition process on a substrate(10). A gas spray unit(103) is formed on the upper side of the process chamber and sprays deposition gas to the substrate. A susceptor(102) is included in the process chamber. A plasma processing unit(104) includes a pair of electrode plates(141) vertical to the substrate. The plasma processing unit includes a power supply unit(142) for applying power to the electrode plate.
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申请公布号 |
KR20110051043(A) |
申请公布日期 |
2011.05.17 |
申请号 |
KR20090107690 |
申请日期 |
2009.11.09 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
PARK, SUNG HYUN;KIM, HYUNG IL |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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