发明名称 APPARATUS FOR ATOMIC LAYER DEPOSITION
摘要 PURPOSE: An atomic layer depositing device is provided to improve the density and corrosion resistance of a thin film by supplying plasma in the same chamber. CONSTITUTION: A process chamber provides a space for a deposition process on a substrate(10). A gas spray unit(103) is formed on the upper side of the process chamber and sprays deposition gas to the substrate. A susceptor(102) is included in the process chamber. A plasma processing unit(104) includes a pair of electrode plates(141) vertical to the substrate. The plasma processing unit includes a power supply unit(142) for applying power to the electrode plate.
申请公布号 KR20110051043(A) 申请公布日期 2011.05.17
申请号 KR20090107690 申请日期 2009.11.09
申请人 K.C.TECH CO., LTD. 发明人 PARK, SUNG HYUN;KIM, HYUNG IL
分类号 H01L21/205 主分类号 H01L21/205
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