| 摘要 |
PURPOSE: A reflection electrode used on a p-gan layer of a gallium nitride based semiconductor light emitting device and the gallium nitride based semiconductor light emitting device are provided to improve an ohmic contact at an interface between the reflection electrode and a p-GaN layer by forming the reflection electrode including Ga, In, or Mg. CONSTITUTION: A light emitting unit includes a p-GaN layer(120), an active layer(130), and an n-GaN layer(140). An n electrode(150) is formed on the n-GaN layer. The n electrode is connected to an external power source and applies currents to a gallium nitride based semiconductor light emitting device. A p electrode(110) is formed on the p-GaN layer. The p electrode includes a first metal including Ag and a second metal including Ga, In, or Mg.
|
