发明名称 |
Programming a memory cell with a diode in series by applying reverse bias |
摘要 |
A method of programming a memory cell comprises applying a reverse bias to the memory cell using a temporary resistor in series with the memory cell. The memory cell comprises a diode and a resistivity switching material element in series. The state of the resistivity switching material element changes from a first initial state to a second state different from the first state.
|
申请公布号 |
US7944728(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20080318021 |
申请日期 |
2008.12.19 |
申请人 |
SANDISK 3D LLC |
发明人 |
NIAN YIBO;KUMAR TANMAY;SCHEUERLEIN ROY E. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|