发明名称 |
Nonvolatile memory devices having stacked structures and methods of fabricating the same |
摘要 |
A memory device includes a first active region on a substrate and first and second source/drain regions on the substrate abutting respective first and second sidewalls of the first active region. A first gate structure is disposed on the first active region between the first and second source/drain regions. A second active region is disposed on the first gate structure between and abutting the first and second source/drain regions. A second gate structure is disposed on the second active region overlying the first gate structure.
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申请公布号 |
US7943998(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20070668115 |
申请日期 |
2007.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN EUN-JUNG;LEE SUNG-YOUNG;KIM MIN-SANG;KIM SUNG-MIN;YEO KYOUNG-HWAN |
分类号 |
H01L29/66;H01L29/792 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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