发明名称 Image sensor
摘要 Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the lower layers to protect the lower layers. The first passivation layer may be formed in a pixel region and a peripheral region with different thicknesses. A spin-on-glass (SOG) layer may be formed over the first passivation layer. A second passivation layer may be formed over the SOG layer. Array etching may be used to form a concave area in the semiconductor substrate. A plurality of micro lenses may be formed over the bottom surface of the concave area.
申请公布号 US7944014(B2) 申请公布日期 2011.05.17
申请号 US20090578159 申请日期 2009.10.13
申请人 DONGBU HITEK CO., LTD. 发明人 BANG SUN-KYUNG
分类号 H01L31/0232 主分类号 H01L31/0232
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