发明名称 |
Method of forming thin film transistor array substrate |
摘要 |
A method of forming a thin-film transistor array substrate is provided. A first mask is used to define a source, a drain and a channel on a substrate. A dielectric layer is formed to cover the source, the drain, the channel and the substrate. A second mask is used to define a patterned photoresist and the dielectric layer. A transparent conductive layer is formed to cover the patterned photoresist and the substrate. A lift-off process is performed to remove the patterned photoresist and a portion of the transparent conductive layer disposed on the patterned photoresist. A third mask is used to define a gate disposed on the dielectric layer.
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申请公布号 |
US7943441(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20090581153 |
申请日期 |
2009.10.18 |
申请人 |
CHUNGHWA PICTURE TUBES, LTD. |
发明人 |
LIAO CHAN-CHANG;CHIU HSIEN-KUN;YEN WEI-PANG;HSU CHAO-HUAN;HUANG KUN-YUAN |
分类号 |
H01L21/84;H01L21/00 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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