| 摘要 |
A semiconductor memory has a plurality of read amplifiers to which a pair each of two complementary bit lines is connected, wherein the semiconductor memory includes at least one switching element each for each bit line, by which at least a partial section of the bit line may be electrically decoupled from the read amplifier, and wherein the semiconductor memory controls the first switching element so that the first switching element, when reading out and/or refreshing any memory cell connected to the bit line, temporarily electrically decouples at least the partial section of the bit line from the read amplifier.
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