发明名称 |
Method of cleaning a film-forming apparatus |
摘要 |
A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-forming apparatus, and heating the constituent member. The constituent member includes quartz or silicon carbide and the silicon-based material includes silicon nitride, or the constituent member includes silicon carbide and the silicon-based material includes silicon oxide.
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申请公布号 |
US7942974(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20050234105 |
申请日期 |
2005.09.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;L'AIR LIQUIDE |
发明人 |
TAMAOKI NAOKI;SATO YUUSUKE;SONOBE JUN;SHIGEMOTO TAKAMITSU;KIMURA TAKAKO |
分类号 |
B08B9/08 |
主分类号 |
B08B9/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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