发明名称 Laser irradiation method and method of manufacturing semiconductor device
摘要 By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
申请公布号 US7943885(B2) 申请公布日期 2011.05.17
申请号 US20060433569 申请日期 2006.05.15
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;MIYAIRI HIDEKAZU;SHIGA AIKO;SHIMOMURA AKIHISA;ISOBE ATSUO
分类号 B23K26/06;H01L21/20;B23K26/073;H01L21/265;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L29/786;H01S3/00;H01S3/10 主分类号 B23K26/06
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