| 发明名称 |
GROUP III-V DEVICES WITH DELTA-DOPED LAYER UNDER CHANNEL REGION |
| 摘要 |
<p>A group III-V material device has a delta-doped region below a channel region. This may improve the performance of the device by reducing the distance between the gate and the channel region.</p> |
| 申请公布号 |
KR20110051271(A) |
申请公布日期 |
2011.05.17 |
| 申请号 |
KR20117007694 |
申请日期 |
2009.12.02 |
| 申请人 |
INTEL CORPORATION |
发明人 |
HUDAIT MANTU K.;TOLCHINSKY PETER G.;CHAU ROBERT S.;RADOSAVLJEVIC MARKO;PILLARISETTY RAVI;BUDREVICH AARON A. |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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