| 摘要 |
A semiconductor component that includes a contact landing pad and a method for manufacturing the semiconductor component. A trench having sidewalls is formed in a semiconductor material and a dielectric material is formed on the sidewalls of the trench. An electrically conductive material is formed on the sidewalls and fills the trench. A multi-layer dielectric structure is formed over the electrically conductive material in the trench, where the multi-layer dielectric material is comprised of a dielectric material of one type sandwiched between dielectric materials of a different type such that an etch rate of the middle layer of dielectric material is different from those of the outer layers of dielectric material. Portions of the middle layer of dielectric material are removed and replaced with electrically conductive material that, in combination with portions of the electrically conductive material in the trench, form a contact landing pad.
|
