发明名称 |
Method of forming a semiconductor device having sub-surface trench charge compensation regions |
摘要 |
In one embodiment, a semiconductor device is formed having sub-surface charge compensation regions in proximity to channel regions of the device. The charge compensation trenches comprise at least two opposite conductivity type semiconductor layers. A channel connecting region electrically couples the channel region to one of the at least two opposite conductivity type semiconductor layers.
|
申请公布号 |
US7943466(B2) |
申请公布日期 |
2011.05.17 |
申请号 |
US20100692271 |
申请日期 |
2010.01.22 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
TU SHANGHUI LARRY;GRIVNA GORDON M. |
分类号 |
H01L27/088;H01L21/74 |
主分类号 |
H01L27/088 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|