发明名称 Integrated circuit device with electronically accessible device identifier
摘要 An semiconductor device having a plurality of fabrication layers. A first region of a first fabrication layer of the semiconductor device is revised. To signal the revision, a connectivity structure in a second region of the first fabrication layer is omitted to interrupt an otherwise continuous signal path that extends through a plurality of interconnection layers of the semiconductor device.
申请公布号 US7943400(B2) 申请公布日期 2011.05.17
申请号 US20070745415 申请日期 2007.05.07
申请人 NETLOGIC MICROSYSTEMS, INC. 发明人 NATARAJ BINDIGANAVALE S.
分类号 H01L21/00 主分类号 H01L21/00
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