| 摘要 |
The method of manufacturing a semiconductor device comprises; forming an HfSiO film 36 on a silicon substrate 26; exposing the HfSiO film 36 to NH3 gas to thereby form an HfSiON film 38; forming an HfSiO film 40 on the HfSiON film 38; adhering Al to the surface of the HfSiO film 40 to thereby form an Al adhered layer 58 on the surface of the HfSiO film 40; and forming a polysilicon film 42 on the HfSiO film 40 with the Al adhered layer 58 formed on the surface.
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