发明名称 Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof
摘要 Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
申请公布号 US7943485(B2) 申请公布日期 2011.05.17
申请号 US20080018131 申请日期 2008.01.22
申请人 GROUP4 LABS, LLC 发明人 FRANCIS DANIEL;EJECKAM FELIX;WASSERBAUER JOHN;FAILI FIROOZ;BABIC DUBRAVKO
分类号 H01L21/30;H01L21/46 主分类号 H01L21/30
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