| 摘要 |
A semiconductor device includes a semiconductor substrate including an NMOS region and a PMOS region, active regions of the semiconductor substrate defined by a device isolation structure formed in the semiconductor substrate, the active regions including an NMOS active region defined in the NMOS region and a PMOS active region defined in the PMOS region, a gate insulating film disposed over the active regions, and a dual poly gate including an amorphous titanium layer formed over the gate insulating film in the NMOS region and the PMOS region. The dual poly gate includes a stacked structure having a lower gate electrode formed of an impurity doped polysilicon layer, a barrier layer including the amorphous titanium layer, and an upper gate electrode formed of a tungsten layer.
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