THROUGH VIA CONTACT IN SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A via contact passing through a semiconductor device and a manufacturing method thereof are provided to suppress the thermal expansion of first and second conductive patterns included in the via contact by including a buffer pattern. CONSTITUTION: A via hole(14) which passes through an interlayer insulation layer(12) and is extended to the lower side of a substrate(10) is formed on a substrate. A first conductive pattern(18a) is formed along the sidewall and the lower side of the via hole. A buffer pattern(22a) is formed on the first conductive pattern. A second conductive pattern(28a) covers the upper side of the buffer pattern. A capping layer(29) is formed on the first and second conductive patterns to protect the first and second conductive patterns.